1. Product Scientific Research and Structural Integrity
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic made up of silicon and carbon atoms arranged in a tetrahedral latticework, mostly in hexagonal (4H, 6H) or cubic (3C) polytypes, each showing extraordinary atomic bond stamina.
The Si– C bond, with a bond energy of around 318 kJ/mol, is among the strongest in structural porcelains, giving outstanding thermal security, solidity, and resistance to chemical strike.
This robust covalent network causes a product with a melting point exceeding 2700 ° C(sublimes), making it among the most refractory non-oxide porcelains available for high-temperature applications.
Unlike oxide ceramics such as alumina, SiC maintains mechanical stamina and creep resistance at temperature levels above 1400 ° C, where several steels and traditional porcelains start to soften or deteriorate.
Its reduced coefficient of thermal development (~ 4.0 × 10 ⁻⁶/ K) incorporated with high thermal conductivity (80– 120 W/(m · K)) allows rapid thermal biking without catastrophic fracturing, a vital characteristic for crucible performance.
These inherent residential properties stem from the well balanced electronegativity and comparable atomic sizes of silicon and carbon, which advertise a highly steady and largely packed crystal structure.
1.2 Microstructure and Mechanical Durability
Silicon carbide crucibles are normally fabricated from sintered or reaction-bonded SiC powders, with microstructure playing a crucial role in durability and thermal shock resistance.
Sintered SiC crucibles are produced with solid-state or liquid-phase sintering at temperatures over 2000 ° C, commonly with boron or carbon ingredients to improve densification and grain boundary cohesion.
This procedure produces a completely thick, fine-grained structure with very little porosity (
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